Project Overview

SMART LEES working to commercialize its proprietary CMOS + III-V integration platform to create novel silicon-based integrated circuits for micro-displays that take advantage of superior optoelectronic properties of III-V materials and devices. We invite candidates to help participate in this exciting goal.

Responsibilities

• Work on various aspects of developing high quality GaN LED materials and devices on Si substrates.
• Involve in LED design, GaN device fabrication and characterization.
• Work with various LEES groups on device and system integration.

Requirements

• PhD degree in Materials Science, Mechanical Engineering, Mechatronics, Electronic/Electrical Engineering, or any related discipline.
• Experienced in III-V device design, fabrication, packaging and characterization is strongly preferred. This includes relevant experience in the semiconductor device fabrication and characterization (e.g. working in cleanrooms, chemical handling and device testing etc.).
• Familiar with circuit design and packaging/integration techniques relevant to optoelectronic devices is advantageous.
• Ability to work well in a team, and with other lab/cleanroom users.
• Ability to work with minimal supervision and deliver results within a given timeline and with an overall program objective.
• Proficient in verbal and written communication skills.

Interested applicants are invited to send in their full CV/resume, cover letter and list of three references (to include reference names and contact information). We regret that only shortlisted candidates will be notified.